Stokes shift in quantum wells: Trapping versus thermalization.

Cathodoluminescence study of band filling and carrier thermalization in GaAs/AlGaAs quantum boxes

We have examined carrier thermalization, recombination, and band filling in GaAs/AlGaAs quantum boxes with low-temperature cathodoluminescence ~CL!. The temperature dependence of the quantum box CL intensity for T< 90 K exhibits an Arrhenius behavior, as a result of carrier thermalization between the quantum box and surrounding barrier regions. The width of the quantum box luminescence is found...

INFLUENCE OF Si-DOPING ON CARRIER LOCALIZATION OF MOCVD-GROWN InGaN/GaN MULTIPLE QUANTUM WELLS

We have systematically studied the influence of Si doping on the optical characteristics of InGaN/GaN multiple quantum wells (MQWs) using photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy combined with studies of optically pumped stimulated emission and structural properties from these materials. The MQWs were grown on 1.8-μm-thick GaN layers on c-plane sapphire fil...

Miniband formation engineering in GaN/AlN constant total effective radius multi-shells quantum dots and rings with on-center hydrogenic donor impurities

In this work, we have studied the miniband and minigaps of GaN/AlN constant total effective radius multi-shells quantum dots (CTER-MSQDs) and Rings (CTERMSQRs).We have investigated effects of the Hydrogenic donor impurities, quantum dots and rings radii, and the number of wells on miniband formation by sub-band energy calculations. We show that in these systems, minigaps can be created and then...

Stokes and anti-Stokes photoluminescence towards five different Inx(Al0.17Ga0.83)1 xAs/Al0.17Ga0.83As quantum wells

Comment on "Photoluminescence ring formation in coupled quantum wells: excitonic versus ambipolar diffusion".

In a recent Letter [1], an inner ring [2] in the photoluminescence (PL) pattern from GaAs=AlGaAs coupled quantum wells is attributed to the Mott transition in a system of initially photoexcited electron-hole (e-h) pairs and secondary excitons. In contrast, in Ref. [3] the inner ring has been explained and modeled in terms of in-plane transport and thermalization of indirect excitons. In our Com...